By B. Jayant Baliga

Advanced strength Rectifier suggestions presents an in-depth remedy of the physics of operation of complicated energy rectifiers. Analytical types for explaining the operation of all of the complicated energy rectifier units are constructed. result of numerical simulations are supplied for extra perception into gadget physics and for validation of assorted analytical models.

Drawing upon years of sensible adventure and utilizing a number of examples and illustrative designs, B. Jayant Baliga discusses:

Analytical formulations for layout and research of buildings akin to the Junction Barrier managed Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier

Numerical simulations to provide an explanation for the working physics and validate the models

The position of silicon carbide within the structural layout and improvement of energy rectifiers

Advanced strength Rectifier strategies can be of curiosity to practising engineers within the strength semiconductor neighborhood and will additionally function a reference for graduate scholars and college doing study in an educational surroundings. chosen sections of the e-book can be utilized as supplementary instructing fabric for classes taught utilizing the textbook 'Fundamentals of strength Semiconductor units' through the author.

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Example text

It is therefore obvious that the methods proposed to suppress the electric field at the Schottky contact in silicon diodes will have even greater utility in silicon carbide rectifiers. This chapter discusses the application of the junction barrier controlled shielding concept to reduce the electric field at the metal-semiconductor contact in silicon and 4H-SiC Schottky rectifiers. In addition to analytical models, the physics of operation of these structures is analyzed by using two-dimensional numerical simulations.

254-258, 2nd Edition, John Wiley and Sons, 1981. A. Bethe, “Theory of the Boundary Layer of Crystal Rectifiers”, MIT Radiation Laboratory Report, Vol. 43, p. 12, 1942. H. H. Williams, “Metal-Semiconductor Contacts”, Second Edition, pp. 35-38, Oxford Science Publications, 1988. L. J. Baliga, “On the Reverse Blocking Characteristics of Schottky Power Diodes”, IEEE Transactions on Electron Devices, Vol. 39, pp. 2813-2814, 1992. 8 M. K. J. Baliga, “Silicon Carbide High Voltage (400V) Schottky Barrier Diodes”, IEEE Electron Device Letters, Vol.

The on-state i-v characteristics obtained by using the three models for the above JBS rectifier structure are shown in Fig. 6. 70 eV was used for this analysis. Although Model B is slightly pessimistic when compared with the other two models, their predictions are very close to each other for determination of the on-state voltage drop. 467 volts at an on-state current density of 100 A/cm2. The impact of changing the cell pitch (p) on the on-state characteristics can be predicted by using any one of the three models.

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